http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120056132-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33cf281df1fdf76b7da1bb88a75ba80d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-13357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate | 2010-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_317ade3db0618dafa1e2ecb66428eef8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38c1d20fb7babdec3ffbe6f8fe5e6929 |
| publicationDate | 2012-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120056132-A |
| titleOfInvention | Light emitting diode device and manufacturing method, backlight unit comprising the same |
| abstract | The present invention discloses a light emitting diode device. In particular, the present invention is to increase the extraction amount of light that is not emitted to the surface by the total reflection of the internal material layer in a semiconductor light emitting diode device (LED) using a III-V nitride-based compound to improve the light efficiency and It relates to a manufacturing method and a backlight unit including the same. The light emitting diode device according to the embodiment of the present invention, the nitride junction structure formed on the substrate, and formed on the nitride junction structure, fine rough by a variable deposition process to increase the amount of light emitted from the nitride junction structure It characterized in that it comprises a transparent electrode layer formed with a varnish pattern. Accordingly, the present invention emits the light emitted from the active layer of the light emitting diode device by the fine roughness pattern formed by the variable deposition method on the transparent electrode, so that the light can be extracted more efficiently. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014014178-A1 |
| priorityDate | 2010-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.