| abstract |
Described herein are aminosilane precursors for depositing silicon containing films, and methods for depositing silicon containing films from such aminosilane precursors. In one embodiment, the present invention provides an aminosilane precursor for depositing a silicon containing film comprising Formula 1: [Formula 1] (R 1 R 2 N) n SiR 3 4 -n Wherein, The substituents R 1 and R 2 are each independently selected from alkyl groups containing 1 to 20 carbon atoms and aryl groups containing 6 to 30 carbon atoms, At least one of the substituents R 1 and R 2 comprises at least one electron withdrawing substituent selected from F, Cl, Br, I, CN, NO 2 , PO (OR) 2 , OR, RCOO, SO, SO 2 , SO 2 R R in at least one electron pull substituent is selected from an alkyl group or an aryl group, R 3 is selected from H, an alkyl group, or an aryl group, n is a number from 1 to 4. |