abstract |
The present invention relates to an oxide semiconductor thin film transistor which is a metal-doped SnO 2 thin film, and more particularly, to an oxide semiconductor thin film transistor including a semiconductor oxide thin film as a channel layer, wherein the semiconductor oxide thin film is formed of Hf, Zr, An oxide semiconductor thin film transistor is a SnO 2 thin film doped with one metal selected from the group consisting of Al, Ga, Ti, and combinations thereof. |