http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120050565-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
filingDate 2010-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21a07825004c3ca91e6790db187854fc
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publicationDate 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120050565-A
titleOfInvention Metal Doped Oxide Semiconductor Thin Film Transistor
abstract The present invention relates to an oxide semiconductor thin film transistor which is a metal-doped SnO 2 thin film, and more particularly, to an oxide semiconductor thin film transistor including a semiconductor oxide thin film as a channel layer, wherein the semiconductor oxide thin film is formed of Hf, Zr, An oxide semiconductor thin film transistor is a SnO 2 thin film doped with one metal selected from the group consisting of Al, Ga, Ti, and combinations thereof.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484200-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019135468-A1
priorityDate 2010-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.