| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d4ada69388e0a1b68daaf536597c732 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L83-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2010-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abd25d625c1031f78750935eced0fb76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c4c423c8841f57c5d4589c60e4f3190
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b0a5134de4a9501cf6e28de6a8e289f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf5d65c1e69ad7e349536683188b943
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2440cf10efb06941dae27be535bae236 |
| publicationDate |
2012-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120044368-A |
| titleOfInvention |
Reverse patterning method and material |
| abstract |
A silsesquioxane resin is applied on the patterned photoresist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. A reactive ion etch recipe containing an aqueous base stripper or CF 4 is then used to “etch back” the silicone resin on top of the photoresist material to expose the entire top surface of the photoresist. A second reactive ion etch recipe containing O 2 is then used to etch the photoresist. As a result, a silicone resin film having via holes having the size and shape of the post patterned with photoresist is formed. Optionally, a new pattern can be delivered to the lower layer (s). |
| priorityDate |
2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |