| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d4ada69388e0a1b68daaf536597c732 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G77-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate |
2010-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf5d65c1e69ad7e349536683188b943
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2440cf10efb06941dae27be535bae236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c4c423c8841f57c5d4589c60e4f3190 |
| publicationDate |
2012-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120044366-A |
| titleOfInvention |
Reverse patterning method and material |
| abstract |
Silsesquioxane resin is applied and cured on top of the patterned photoresist to produce a cured silsesquioxane resin on top of the pattern surface. Thereafter, a reactive ion etch recipe containing CF 4 is used to “etch back” the silicone resin onto the top of the photoresist material to expose the entire top surface of the organic based photoresist. The organic photoresist is then etched using a second reactive ion etch recipe containing O 2 . As a result, a silicone resin film having via holes having the size and shape of the post patterned with photoresist is formed. Optionally, a new pattern can be delivered to the lower layer (s). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160112615-A |
| priorityDate |
2009-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |