| abstract |
The present invention relates to a sulfonium salt represented by formula (1): In said formula, R < 1> represents the C1-C30 linear, branched, or cyclic monovalent hydrocarbon group which may contain the hydrogen atom or the hetero atom. R 2 represents a hydrogen atom or a trifluoromethyl group. R f represents an alkyl group having 1 to 4 carbon atoms in which at least one hydrogen atom is replaced with a fluorine atom. [Effects] The sulfonium salt of the present invention has a fluoroalkoxy chain in the cation moiety, and when the sulfonium salt of the present invention is used as a resist material, the elution to immersion water is less, and the pattern dependency (dark? Bright tea) is used. This is very useful as a photoacid generator of the chemically amplified resist material. |