Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2008-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_459c5588c5a38895656a4aded463ca3c |
publicationDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20120031238-A |
titleOfInvention |
Semiconductor device and formation method thereof |
abstract |
A semiconductor device having a tipless epitaxial source / drain region and a method of forming the semiconductor device are described. In one embodiment, the semiconductor device includes a gate stack on a substrate. The gate stack consists of a gate electrode over the gate dielectric layer and resides over a channel region in the substrate. The semiconductor device also includes a pair of source / drain regions in the substrate region on both sides of the channel region. The pair of source / drain regions connect directly with the gate dielectric layer, whose lattice constant is different from the lattice constant of the channel region. In one embodiment, the semiconductor device is formed using a dielectric gate stack placeholder. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150126765-A |
priorityDate |
2007-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |