http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120022535-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0c468e687b43595cae7cb1c2667678f1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0227 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2011-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9edfd1bc665d16c9b441cf807dcf9772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c56d7e5133db849a31b9d4f828fdb91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_928f17f8c71bc2e85945e9919d5616f8 |
| publicationDate | 2012-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120022535-A |
| titleOfInvention | Semiconductor manufacturing equipment |
| abstract | (Problem) Provided is a semiconductor manufacturing apparatus capable of improving a production yield by removing a film attached to a susceptor in a SiC epitaxial growth process. (Solution means) The transfer chamber which has the film-forming chamber 2 which forms an SiC epitaxial film on the wafer W mounted in the susceptor S, and the transfer robot 17 in which the susceptor S is conveyed ( It is connected to the film-forming chamber 2 through 4), and the cleaning chamber 5 which removes the SiC film | membrane attached to the susceptor S is provided. The cleaning chamber 5 is provided with the heater 208 which heats the susceptor S at the temperature of 400 degreeC or more, and the etching gas supply means which supplies an etching gas from the upper part of the susceptor S, and removes a SiC film | membrane. . The cleaning chamber 5 also serves as a regeneration chamber in which a SiC film is formed on the surface of the susceptor S. FIG. |
| priorityDate | 2010-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.