http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120021683-A

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filingDate 2010-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8737e77f32df2f71f54c3099b0adcaf8
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publicationDate 2012-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120021683-A
titleOfInvention Field effect transistor based biosensor and its manufacturing method
abstract The present invention relates to a field effect transistor-based biosensor and a method of manufacturing the same, and more particularly, to fabricate a biosensor using a hydrophobic photoresist and a hydrophilic gate insulating layer to apply a field effect transistor, so that the gate without physical and chemical processing The present invention relates to a field effect transistor-based biosensor and a method of fabricating the biomolecule in the region to improve the detection sensitivity of the sensor and to obtain accurate detection results. Since the manufacturing method of the field effect transistor-based biosensor according to the present invention is manufactured using a semiconductor process, the production cost can be reduced through a batch process, the sensor can be miniaturized, and the interface characteristics of the hydrophobic photoresist and the hydrophilic gate insulating layer The manufacturing process is simple, and biomolecules can be fixed in the gate region at the same time, so that the conversion of electrical signals is quicker than the existing field effect transistor-based biosensors, and the detection sensitivity is improved to obtain accurate detection results. have.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8883645-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014007892-A2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190001647-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8841712-B2
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Total number of triples: 34.