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filingDate 2011-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20120018064-A
titleOfInvention Method of forming CMOS transistor using tensile stress film and hydrogen plasma treatment
abstract A method of manufacturing a semiconductor device is provided. A method of manufacturing a semiconductor device includes forming a PMOS transistor including a SiGe channel region, exposing at least a portion of the PMOS transistor to hydrogen plasma, and forming a tensile stress film on the PMOS transistor.
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