http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120016644-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e0bf0928b608797b70bbc2b91c7e52e |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
filingDate | 2010-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a94e945a56a29bb7ae1a3d2d89e0ae42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_767b16a077701229edff038b5d77ca4b |
publicationDate | 2012-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20120016644-A |
titleOfInvention | Oxide particle slurry for chemical mechanical planarization of ruthenium and other precious metals |
abstract | The present invention provides a method for chemical mechanical planarization of ruthenium. The semiconductor substrate containing ruthenium is brought into contact with a chemical mechanical polishing system containing oxide particles, abrasives, polishing pads and liquid carriers. The pH of the polishing composition is about 8-12. In the case of the slurry of the present invention, a high ruthenium removal rate is observed. The disclosed oxide particles advantageously improve the polishing rate of ruthenium under low polishing pressures and reduce scratches generated on low k-materials. |
priorityDate | 2009-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 80.