http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120006203-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14698 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2010-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3390461286e75e5a9bdbe0dcee11b30d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa0b611cc1f57ae296be18cde9b8e088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65dd1465529947b50a61f4f8b3e46fd4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0742ffcdc6452ebfa02e7eff5d1dacee |
| publicationDate | 2012-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120006203-A |
| titleOfInvention | CMOS image sensor manufacturing method |
| abstract | The present invention is to provide a CMOS image sensor manufacturing method that can minimize the etching damage by the plasma during the etching process for forming a light box, the CMOS image sensor manufacturing method of the present invention on the substrate on which the photodiode is formed Forming an insulating film; First etching the insulating film in a plasma manner so that the insulating film partially remains on the photodiode; Implanting impurities into the residual insulating film to form a doped region; And forming a light box for exposing the upper portion of the photodiode by second etching the doped region in a non-plasma manner. The above-described present invention provides a dry etching method without using dry etching alone when forming the light box. By proceeding with doping and wet etching, there is an effect that can minimize the etching damage by the plasma. |
| priorityDate | 2010-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.