| abstract |
The semiconductor structure serving as the center of the semiconductor fabrication platform is empty-well regions that are used in various ways by electronic devices, specifically insulated gate field-effect transistors ("IGFETs"), to achieve desired electronic properties. And a combination of filled-well regions. Near the top of the empty well there is a relatively small amount of semiconductor well dopant. Near the top of the filled well there is a significant amount of semiconductor well dopant. Some IGFETs 100, 102, 112, 114, 124, and 126 use empty wells 180, 182, 192, 194, 204, and 206 in achieving desired transistor characteristics. Other IGFETs 108, 110, 116, 118, 120, and 122 use filled wells 188, 190, 196, 198, 200, and 202 in achieving desired transistor characteristics. The combination of empty wells and filled wells allows semiconductor fabrication platforms to provide a wide variety of high-performance IGFETs, from which circuit designers can find specific IGFETs for a variety of analog and digital applications, including mixed-signal applications. You will be able to select them. |