abstract |
An object of the present invention is to provide a resist protective film material for immersion lithography which is excellent in water repellency and water slidability, has little development defect, and has a good resist pattern shape after development, and a pattern forming method using the material. This invention contains the high molecular compound (P1-1) which contains the repeating unit represented by the following general formula (1a), (1b-1), and (1c) at least, and has a weight average molecular weight in the range of 1,000-500,000. It is related with the resist protective film material characterized by the above-mentioned. |