| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05B15-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05C9-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05C9-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2011-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43bc04b01f332232b8752f1105e3e5cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_307082d51c124111fb9c91cfa4ed4d89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2632c2f065b3858bee58720e6899202e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dd1a5fa96d2a2d0bb61bb1e7d752150
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8ffced3765a73401e2871c96d849917
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f01c078f7bba4cb525fcd39b61c77de6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77b6278e871efc1037ff052d8c340ea8 |
| publicationDate |
2011-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110132214-A |
| titleOfInvention |
Hydrophobicization Processing Method and Hydrophobicization Processing Apparatus |
| abstract |
An object of the present invention is to provide a hydrophobization treatment method and a hydrophobization treatment apparatus capable of securing stable and high hydrophobicity. In a hydrophobization treatment in which a HMDS gas is supplied to a wafer W and a hydrophobic group consisting of —O (CH 3 ) 3 is formed on a surface of the wafer, water vapor is used as a reaction accelerator to promote the hydrophobicity. A step of supplying the wafer (W), a step of heating the wafer (W) carried into the processing container, and a surface of the wafer (W) in a state in which the water vapor is adsorbed on the surface of the heated wafer (W). The step of supplying the HMD gas is carried out. The water vapor promotes the reaction of the silicon of the HMDS hydrophobization processing gas and the oxygen on the substrate surface, thereby obtaining stable and high hydrophobicity. |
| priorityDate |
2010-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |