| abstract |
A backside illuminated image sensor is proposed that includes a high concentration P region formed above and below the N region. The back-illuminated image sensor includes a semiconductor substrate having an upper surface and a lower surface, photodiodes formed in the semiconductor substrate, and metal wires formed under the semiconductor substrate, wherein the photodiodes are respectively N region, the A lower P region formed below the N region, and an upper P region formed above the N region. |