http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110128119-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4af0df9a26ff4aafde7285cbd8eb12f4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2010-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a2d418ef43cae97a235b3e7f6bcd697 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc4c21a4b95190d1b9a4a2e96c13e0e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_970aaf240653a697f2fa303e27c22a2c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2770fbb0169d352a573cf9891344e62 |
| publicationDate | 2011-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110128119-A |
| titleOfInvention | Compound semiconductor device and its manufacturing method |
| abstract | This invention makes it a subject to improve the adhesiveness of a gold alloy electrode and an interlayer insulation film. The compound semiconductor device of the present invention for solving the above problems includes the gate semiconductor layer 10, the cathode semiconductor layer 12, the Au alloy cathode electrode 14 formed on the cathode semiconductor layer 12, and the gate semiconductor layer. The Au alloy gate electrode 16 formed on the upper layer 10, the interlayer insulating film 18, the Al wiring 20 on the cathode electrode 14 and the gate electrode 16, and the protective film 22 are provided. Oxide films 15 and 17 are formed at the interface between the cathode electrode 14 and the gate electrode 16 and the interlayer insulating film 18 by an oxidizing annealing treatment, and have the constituent elements of the underlying layer as main components. |
| priorityDate | 2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559479 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID114942 |
Total number of triples: 22.