| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a911d04aed3ce17150d01a5c90a09db |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2010-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_452f2533e8b4ff67e2c252f1c675c505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71cd5d2f22b90e30f171b2e6fb3ce5b0 |
| publicationDate |
2011-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110125655-A |
| titleOfInvention |
Tiled substrates through deposition and epitaxial lift off processes |
| abstract |
Embodiments of the present invention generally relate to epitaxial lift off (ELO) films and methods of producing such films. Embodiments provide a method for simultaneously and separately growing a plurality of ELO films or stacks on a common support substrate tiled with numerous epitaxial growth substrates or surfaces. Thereafter, the ELO films are removed from the epitaxial growth substrates by an etching step during the ELO process. The tiled growth substrate, including epitaxial growth substrates disposed on the support substrate, can be reused to grow additional ELO films. In one embodiment, a tiled growth substrate is provided, wherein the tiled growth substrate is on a support substrate having a coefficient of thermal expansion in the range of about 5 × 10 −6 ° C. −1 to about 9 × 10 −6 ° C. −1 . Two or more gallium arsenide growth substrates disposed separately. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018124366-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180079600-A |
| priorityDate |
2009-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |