http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110123809-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2010-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b230d86c69f120f8d128ebbdf2c7730 |
| publicationDate | 2011-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110123809-A |
| titleOfInvention | How to form a high-stack gate stack with reduced effective oxide thickness |
| abstract | A method is provided for forming a high-k gate stack with reduced effective oxide thickness (EOT) for a semiconductor device. The method includes providing a silicon-containing substrate, forming an interfacial layer having a first equivalent oxide thickness on the silicon-containing substrate, depositing a first high-k film on the interfacial layer, and And heat treating the first high-k film and the interface layer at a temperature to form a strained interface layer having a second equivalent oxide thickness that is less than or equal to a first equivalent oxide thickness. The method further includes depositing a second high-k film on the strain interface layer. According to one embodiment, the first high-k film comprises lanthanum oxide and the second high-k film comprises hafnium silicate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210053241-A |
| priorityDate | 2009-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 176.