http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110123733-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2010-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8613657e1de6558dcfbd33d350798452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddf39d3d121df0a547c22a600bf90888 |
| publicationDate | 2011-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110123733-A |
| titleOfInvention | Method of fabricating MOS devices having epitaxially grown stress-induced source and drain regions |
| abstract | Methods are provided for manufacturing a semiconductor device 100 in and on a semiconductor substrate 110 having a first region 180 and a second region 200. According to an exemplary embodiment of the present invention, one method includes forming a first gate stack 124 overlying the first region 180 and a second gate stack 128 overlying the second region 200. Etching the first recesses 142 and the second recesses 142 into the substrate 110, and the first recesses 142 at least in the first region 180. Aligned with the first gate stack 124, the second recesses 142 aligned with the second gate stack 128 in at least the second region 200, and the first and second recesses. Epitaxially growing a first stress-inducing monocrystalline material 150 in sets 142, and removing the first stress-inducing monocrystalline material 150 from the first recesses 142. And epitaxially growing a second stress-inducing monocrystalline material 170 in the first recesses 142, wherein The second stress-inducing monocrystalline material 170 has a different composition from the first stress-inducing monocrystalline material 150. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9171762-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140055907-A |
| priorityDate | 2009-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.