| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| filingDate |
2009-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90aed127c52686de4dfabb003c1a0374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe67ce2bc0ab95a799200f999b0a07af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5669764427029858b7ced9e1c54e5dd8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fcc7323836867600b804d2fff05ff46 |
| publicationDate |
2011-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110122700-A |
| titleOfInvention |
Ion Implanted Substrates and Methods with Capping Layers |
| abstract |
In the ion implantation method, the substrate is disposed in the process region, and ions are implanted into the region of the substrate to form an ion implantation region. A porous capping layer is deposited on the ion implantation region. The substrate is annealed to volatilize at least 80% of the porous capping layer overlying the ion implantation region during the annealing process. The intermediate product includes a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions. |
| priorityDate |
2009-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |