http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110119610-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1d167be63e06feb9a0f12339ffc441c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 |
| filingDate | 2011-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c4ddd55b8447996ea328bd823003418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7c3c8220607a8db1b50372083d4629a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b20a7b00894c4206da58df2ce778a67 |
| publicationDate | 2011-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110119610-A |
| titleOfInvention | Silicon wafer having proximity gettering capability in low temperature process and manufacturing method thereof |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a heat treatment wafer, and annealing for growing an oxygen precipitation nucleus from the point defect after a rapid heat treatment to control the point defect that becomes a BMD (Bulk Micro-Defect) due to the heat history applied in the semiconductor device manufacturing process. By carrying out the process, a BMD having a size of 30 nm or more in the bulk region is generated by the low thermal history, including the denude zones formed up to a predetermined depth from the surface of the front and rear surfaces of the wafer, and the bulk region formed between the denude zones, or Alternatively, a silicon wafer in which a BMD is already produced is provided. The wafer of the present invention has the proximity gettering capability necessary for the fabrication of modern semiconductor devices, which are increasingly low temperature processed and the device thickness is reduced. |
| priorityDate | 2011-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.