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filingDate 2004-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2da7048163140e81fc8403ef2da249d6
publicationDate 2011-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110118735-A
titleOfInvention Precursor for Metal Oxide Layer or Metal Oxide Film Deposition
abstract The present invention relates to general formula OCR 1 (R 2 ) CH 2 X [wherein R 1 is H, or an alkyl group, R 2 is an optionally substituted alkyl group, X is OR, and NR 2 (where R is an alkyl group And a substituted alkyl group), and a rare earth metal precursor used for metalorganic chemical vapor deposition (MOCVD). The present invention also relates to a method of preparing the precursor and a method of depositing a metal oxide layer from the precursor.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160015037-A
priorityDate 2003-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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