| abstract |
The present invention relates to a patterning of multiple films made of a copper film and another metal, which is a metal wiring material for a gate, a source, and a drain electrode, which constitute a thin film transistor (TFT) of a thin film transistor liquid crystal display device. It relates to an etching composition for a thin film transistor liquid crystal display device. The etching composition of the present invention comprises 3 to 35% by weight of hydrogen peroxide, 0.1 to 5% by weight of oxidizing agent, 0.1 to 5% by weight of phosphate, 0.1 to 5% by weight of chelating agent, 0.001 to 5% by weight % Aldehyde derivative, 0.01 to 5% by weight of ammonium compound, 0.1 to 5% by weight of additives and water to the total weight of the total composition is characterized in that it comprises 100% by weight. |