| abstract |
An X-ray detector having an oxide semiconductor transistor is disclosed. An X-ray detector having an oxide semiconductor transistor disclosed includes an oxide semiconductor transistor having a channel formed of an oxide semiconductor material disposed in series on a substrate, a signal storage capacitor, and a photoconductor. Pixel electrodes and a common electrode are formed on both sides of the photoconductor, respectively. The channel is an oxide semiconductor channel including ZnO or a compound including ZnO and at least one selected from Ga, In, Hf, and Sn. |