| abstract |
In the method of manufacturing this photoelectric conversion device, the photoelectric conversion device 10 in which the first photoelectric conversion unit 3 and the second photoelectric conversion unit 4 are sequentially stacked on the transparent conductive film 2 formed on the substrate 1 is provided. As a manufacturing method of the method, the first p-type semiconductor layer 31, the first i-type semiconductor layer 32, the first n-type semiconductor layer (in the plurality of first plasma CVD reaction chambers 62, 63, 64, 65) 33) and a second plasma before forming the second i-type semiconductor layer 42 by forming each of the second p-type semiconductor layer 41 and exposing the second p-type semiconductor layer 41 to an atmospheric atmosphere. A gas containing a p-type impurity is supplied into the CVD reaction chamber 72, and the second i-type semiconductor is disposed on the second p-type semiconductor layer 41 exposed to the atmosphere in the second plasma CVD reaction chamber 72. A layer 42 is formed, and a second n-type semiconductor layer 43 is formed on the second i-type semiconductor layer 42. |