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filingDate 2009-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f80c55bd60c3361074d975cda3d0f33
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publicationDate 2011-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110102293-A
titleOfInvention Method for manufacturing semiconductor substrate, Method for manufacturing semiconductor substrate, electronic device, and reaction apparatus
abstract The present invention relates to a method of manufacturing a semiconductor substrate by heat treating a portion to be thermally treated with a single crystal layer and a base substrate provided with a portion to be protected from heat applied by the heat treatment. There is provided a method of manufacturing a semiconductor substrate, comprising providing a protective layer that protects a portion to be protected from electromagnetic waves to be irradiated, and annealing the portion to be treated by irradiating the entire base substrate with electromagnetic waves.
priorityDate 2008-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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