| abstract |
In the through connecting portion of the semiconductor substrate, there is provided a semiconductor device in which peeling and breaking at the bottom of the through hole of the surface-side wiring layer are prevented and connection defects are improved, and a method for manufacturing such a semiconductor device. On the surface of the semiconductor substrate 2 having the through holes 3, the first insulating layer 4 having the openings 4a having the same diameter as the through holes 3 is coated, and the first wiring layer 5 thereon. ) Covers the opening 4a. In addition, the second insulating layer 6 is coated in the through hole 3 and on the back surface of the semiconductor substrate 2. The second insulating layer 6 is formed to be in contact with the first wiring layer 5, and has a plurality of openings 6a having a smaller diameter than the opening 4a of the first insulating layer 4 in the inward contact portion. In addition, the second wiring layer 7 is filled and formed in the through hole 3, and the second wiring layer 7 passes through the plurality of openings 6a of the second insulating layer 6. Inscribed in. |