| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B59-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C28-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B5-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B9-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22B5-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B59-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B9-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B9-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22B9-04 |
| filingDate |
2010-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fd5b4d51d25d68e58c70dfda353f4b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_178fb715fe82ea8b8fa8d596a08df582 |
| publicationDate |
2011-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110099343-A |
| titleOfInvention |
Manufacturing method of high purity erbium, sputtering target composed of high purity erbium and high purity erbium, and metal gate film mainly containing high purity erbium |
| abstract |
A process for producing high purity erbium, characterized by mixing erbium oxide with a reducing metal, heating in vacuo to reduce and distill erbium, and further dissolving it in an inert atmosphere to obtain high purity erbium, and excluding rare earth elements and gas components. High purity erbium, characterized in that the purity is 4N or more and the oxygen content is 200 wtppm or less. Efficiently and stably provide a method for high purity of erbium having a high vapor pressure and difficult to purify in a molten state, and a sputtering target made of high purity erbium and high purity material erbium, and a metal gate thin film mainly composed of high purity material erbium It is a subject to provide the technique which can be done. |
| priorityDate |
2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |