http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110096981-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
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filingDate 2010-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bacb5a548bdf5ea0fc5c5ec6747e5df2
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publicationDate 2011-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110096981-A
titleOfInvention Method for manufacturing metal oxide nanowires and method for manufacturing nano-activated material and thin film transistor using same
abstract The present invention relates to a method of manufacturing a metal oxide nanowire, and a method of manufacturing a nano-activated material and a thin film transistor using the same, and to grow and grow a metal oxide nanowire from a metal layer or a substrate through heating of a metal plate or a substrate By producing the highly reactive nano-activated material by depositing aluminum, which is a reactive metal, on the metal oxide nanowires, it is more responsive than the activated material prepared using the conventional nanopowder, and is advantageous for low ignition temperature and impurities reduction. It works.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101439174-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101303988-B1
priorityDate 2010-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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