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filingDate 2010-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bf3836f596256c1c5780e42ca3b8044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_308af64edbd7bfbe1948fac560ebfc66
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publicationDate 2011-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110096897-A
titleOfInvention A method of manufacturing a X-type gallium nitride compound semiconductor, a method of activating a X-type dopant contained in a gallium nitride compound semiconductor, a gallium nitride compound semiconductor device, and a gallium nitride compound semiconductor light emitting device
abstract The present invention increases the hole concentration and improves the electrical properties of a p-type gallium nitride compound semiconductor layer by activating the p-type dopant contained in the gallium nitride compound semiconductor using an electrochemical potentiostatic method. It is intended to provide a method which can be done and to provide a gallium nitride compound semiconductor device and a light emitting device manufactured using the method.
priorityDate 2010-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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