http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110096897-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3584903efe1babebbd056e855a2cc2b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a45c7905c6b104fc4aeba3c86ae41a3d |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0008 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
filingDate | 2010-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bf3836f596256c1c5780e42ca3b8044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_308af64edbd7bfbe1948fac560ebfc66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd4a7d20dedd226c267121b52998d5e7 |
publicationDate | 2011-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20110096897-A |
titleOfInvention | A method of manufacturing a X-type gallium nitride compound semiconductor, a method of activating a X-type dopant contained in a gallium nitride compound semiconductor, a gallium nitride compound semiconductor device, and a gallium nitride compound semiconductor light emitting device |
abstract | The present invention increases the hole concentration and improves the electrical properties of a p-type gallium nitride compound semiconductor layer by activating the p-type dopant contained in the gallium nitride compound semiconductor using an electrochemical potentiostatic method. It is intended to provide a method which can be done and to provide a gallium nitride compound semiconductor device and a light emitting device manufactured using the method. |
priorityDate | 2010-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.