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publicationDate 2011-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110093857-A
titleOfInvention Control of relative growth rates of different exposed crystallographic facets of group III nitride crystals during ammonothermal growth of group III nitride crystals
abstract A method is disclosed for controlling the relative and absolute growth rates of all possible crystallographic aspects of group III nitride crystals during ammonothermal growth. The growth rates of the various exposed crystallographic aspects of the Group III nitride crystals are controlled by varying the environment and / or conditions within the reaction vessel that can be further divided into a plurality of separate regions, each of which has a unique environment and Have conditions. The environment includes the amount of atoms, compounds, or chemical complexes in each of the regions, with the relative movements and relative proportions of atoms, compounds, or chemical complexes in and between the regions, respectively. Conditions include the thermodynamic properties of each of the zones such as temperatures, pressures and / or densities.
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