http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110091722-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
filingDate 2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47180b4860ed94c46cf38d266e350ffe
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publicationDate 2011-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110091722-A
titleOfInvention Improvement of conformal doping in P3I chamber
abstract Methods for implanting ions into a substrate by a plasma implanted ion implantation process are provided. In one embodiment, a method for implanting ions into a substrate comprises providing a substrate in a processing chamber, the substrate comprising a substrate surface having one or more features formed therein, each feature having one or more horizontal surfaces and one Having more than one vertical surface; Generating a plasma from a gas mixture comprising a reactant gas configured to generate ions; Depositing a layer of material on the substrate surface and on at least one horizontal surface of the substrate feature; Implanting ions from the plasma into the substrate and into at least one horizontal surface and into at least one vertical surface by an isotropic process; And etching the material layer on the substrate surface and the at least one horizontal surface by an anisotropic process.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013163082-A1
priorityDate 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.