| abstract |
INDUSTRIAL APPLICABILITY The present invention is a resist underlayer film material of a multilayer resist film used in lithography, which can highly suppress the occurrence of torsion during substrate etching and can avoid the problem of poisoning in the formation of an upper layer pattern using a chemically amplified resist. An object of the present invention is to provide a resist underlayer film material, a resist underlayer film forming method, a pattern forming method, and a fullerene derivative for forming a resist underlayer film. In addition, the present invention provides a resist underlayer film material of a multilayer resist film used in lithography, comprising (A) a fullerene derivative having a carboxyl group protected with a heat stabilizer, and (B) an organic solvent. It is about. |