http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110091035-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2009-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10941373b6a864097266d70055b7c335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5d9cf7ff1e489b8fdf9960789a811c8 |
| publicationDate | 2011-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110091035-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A gate electrode layer over the substrate; A gate insulating layer over the gate electrode layer; A first source electrode layer and a first drain electrode layer over the gate insulating layer; An oxide semiconductor layer over the gate insulating layer; And a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer, wherein the first, second and third portions of the bottom surface of the oxide semiconductor layer are formed of the first source electrode layer, the first drain electrode layer, and the gate insulating layer. And a first portion and a second portion of the upper surface of the oxide semiconductor layer are in contact with the second source electrode layer and the second drain electrode layer, respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer, respectively. |
| priorityDate | 2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.