| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83191
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15747 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-48 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48 |
| filingDate |
2011-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b957f074d56e5f1bfb1bdbb58575ef42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7c6e9e4a370a7de180924bb986323f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acfd67c8011cdede16d35cd8b8eabad3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48b03303a847852712431db578a948b1 |
| publicationDate |
2011-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110089815-A |
| titleOfInvention |
Film for semiconductor device manufacturing and manufacturing method of semiconductor device |
| abstract |
Even when the semiconductor wafer is thin, the holding force when dicing the thin semiconductor wafer, the peelability when the semiconductor chip obtained by dicing is peeled off integrally with the adhesive layer, and the adhesion of the cutting chip to the semiconductor chip It is to provide a novel semiconductor device film that is excellent in preventing contamination of a semiconductor chip having excellent low-pollution balance characteristics. It is a film for semiconductor device manufacture used at the time of manufacture of a semiconductor device, The radiation hardening type formed on the base material layer, the 1st adhesive layer formed on the base material layer, and the 1st adhesive layer, and hardened | cured previously by irradiation of radiation. It is a film for semiconductor device manufacture which has a 2nd adhesive layer and an adhesive bond layer formed on the 2nd adhesive layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170121065-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220016019-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160134708-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102172003-B1 |
| priorityDate |
2010-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |