http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110085152-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33f8096f7c6f74ac787c777aaf01104a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e71c17ec6e47dd48a6dd4f316d2c0fb5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D21-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-54 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-00 |
| filingDate | 2010-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e9fc14a6fc321a4c468d17beaf9f55c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c26bf8518972d0c31489b00ab55be40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30e460cfdb78070a9b60e742756d5f0f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9eab1e98c3d2f38e2a1fab2103bdf54a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b5c9fb9a25af4faf3ee8be70b5f918d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6b5fe2693a0dddca3be95f84f185992 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d68b21930fc59e11cf1820729385eed |
| publicationDate | 2011-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110085152-A |
| titleOfInvention | Method for manufacturing ruthenium dioxide thin film using electron beam irradiation and ruthenium dioxide thin film with improved energy storage capacity |
| abstract | The present invention relates to a method for preparing a ruthenium dioxide thin film using electron beam irradiation, and to an improved ruthenium dioxide thin film with improved energy storage capability. Step (step 1); Immersing the substrate in the electrolyte solution prepared in step 1, and preparing a ruthenium dioxide thin film by an electrochemical deposition method (step 2); And it relates to a method for producing a ruthenium dioxide thin film comprising a step (step 3) of irradiating an electron beam on the thin film prepared in step 2 and the ruthenium dioxide thin film with improved energy storage capacity produced thereby. The ruthenium dioxide thin film according to the present invention is manufactured by performing only electron beam irradiation instead of the high temperature firing process, which is essentially required in the conventional method, to simplify the process, and to improve the stability and electrode activity of the electrode, thereby improving thin film crystallinity and energy. The storage capacity and electrical performance are greatly improved, and can be usefully used for electrode materials such as catalysts, lithium secondary batteries, ultracapacitors and the like. |
| priorityDate | 2010-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.