http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110081771-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76256 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate | 2009-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42ed5423bfa1c6806bd782be5956c711 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c4ea8733ef97034d09e57f4e7526eac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5dc27d354509fc3ccda536ca269a563 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37b5c541187dde9a8934dcf65af99b31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c941886b9985239ea27c05048283a01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5711efff92c7baffcbfff8758f9d9174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df3f7d17803875152ce46f5e3b4251a |
| publicationDate | 2011-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110081771-A |
| titleOfInvention | Method for manufacturing silicon thin film transfer insulating wafer |
| abstract | <Problem> The present invention can manufacture a SOI wafer capable of preventing occurrence of thermal distortion, peeling, cracking, and the like caused by the difference in thermal expansion coefficient between the insulating substrate and the SOI layer, and making the film thickness uniformity of the SOI layer high. Provide a method. <Solution> A step of performing surface activation treatment on both or one surface of the hydrogen ion implantation surface of the single crystal silicon wafer having the hydrogen ion implantation layer and the surface of the insulating wafer, and bonding the surface by bonding the hydrogen ion implantation surface and the surface. A bonding step of obtaining a wafer, a step of heat-treating the bonded wafer at a first temperature, and a step of grinding and / or etching the surface of the single crystal silicon wafer side of the bonded wafer in order to reduce the thickness of the single crystal silicon wafer of the bonded wafer. And a step of heat-treating the bonded wafer at a second temperature higher than the first temperature, and a step of peeling the hydrogen ion implanted layer by applying a mechanical impact to the hydrogen ion implanted layer of the bonded wafer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150112968-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140082652-A |
| priorityDate | 2008-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 53.