http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110076788-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bca60e11ea5cabf6bf9d4c65da0e3a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d44b3274b9245d66fb7de3f1400c1f6 |
| publicationDate | 2011-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110076788-A |
| titleOfInvention | Thin film transistor |
| abstract | The present invention provides a method for producing a thin film transistor having good electrical characteristics with good productivity. A gate insulating layer covering the gate electrode, a semiconductor layer in contact with the gate insulating layer, a semiconductor layer having an uneven microcrystalline semiconductor region and an amorphous semiconductor region, and a portion of the semiconductor layer in contact with the impurity semiconductor layer and the impurity semiconductor layer And a first oxide region formed between the microcrystalline semiconductor region and the wiring, and a second oxide region formed between the amorphous semiconductor region and the wiring, and the elements constituting the wiring measured in the energy dispersive X-ray spectroscopy. From the intersection of the profile of the profile and the element of the semiconductor layer, at the semiconductor layer side, the maximum slope tangent m1 of the oxygen profile in the first oxide region and the maximum slope tangent of the oxygen profile in the second oxide region ( m2) is a thin film transistor whose 1 <m1 / m2 <10. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160052713-A |
| priorityDate | 2009-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.