http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110076046-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd7c27b9ec61781656e6f039702fd568 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2018 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2027 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2009-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a44606530f30862fcd8592b3dfc6b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f76a480bffb610910f235fd8ad84c65 |
| publicationDate | 2011-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110076046-A |
| titleOfInvention | Photoanode Quantum Dot Sensitive Solar Cell and Photoanode Manufacturing Method |
| abstract | The present invention provides a novel photoanode quantum dot sensitized solar cell, and provides a method of manufacturing a photocathode provided in the photoanode quantum dot sensitized solar cell according to the present invention. In detail, the photocathode quantum dot-sensitized solar cell according to the present invention includes a photocathode facing each other and an opposing electrode and an electrolyte interposed therebetween, wherein the photoanode includes a transparent conductive electrode; A porous photoanode semiconductor particle layer formed on the conductive electrode; And a photocathode photosensitive quantum dot provided in contact with the porous photocathode semiconductor particle layer, wherein the photoelectrons and photo holes generated in the photocathode photosensitive quantum dots by sunlight are provided to the counter electrode through the electrolyte. The light hole moves to the conductive electrode through the photoanode semiconductor particle layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11258024-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170060184-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276734-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388897-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11038132-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10079320-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200111283-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302833-B2 |
| priorityDate | 2009-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.