| abstract |
The present invention provides a thin film transistor having good electrical characteristics and high productivity. A semiconductor having a gate insulating layer covering the gate electrode, a semiconductor layer in contact with the gate insulating layer, an impurity semiconductor layer in contact with a portion of the semiconductor layer to form a source region and a drain region, and a wiring in contact with the impurity semiconductor layer, A thin film transistor having an uneven microcrystalline semiconductor region formed on the gate insulating layer side in the layer, an amorphous semiconductor region in contact with the microcrystalline semiconductor region, and having a barrier region between the semiconductor layer and the wiring. |