| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7fb8e9adad52abb74b28b5975feb57a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-147 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2010-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46c8cb80e4df2e6106c09fb7423e05e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a42b95915b423121dc241b7342caaa9 |
| publicationDate |
2011-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110068898-A |
| titleOfInvention |
How to form base wafer through vias to fabricate stacked devices |
| abstract |
The present invention relates to an effective chemical mechanical planarization (CMP) method of forming vias in a silicon wafer to fabricate stacked devices using TSV (through-silicon via) technology. The process of the present invention provides a high removal rate of both metal (eg copper) and silicon, thus eliminating the need for a grinding step prior to CMP processing. The method of the present invention provides a Cu: Si selectivity of about 1: 1 for the removal of silicon and copper under appropriate conditions, and this Cu: Si selectivity can be adjusted by adjusting the levels of some key components. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150037146-A |
| priorityDate |
2009-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |