Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5351c62aee4203f2be2944f21a6def2 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 |
filingDate |
2009-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b25b91381bdbe4ee4398e13ef1e54aff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_992d52454aa3ca86236e3c770778278b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a72d67890811b56c81b52d1f1aaf3c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40b1d6bdb97bc2558d2d1c5aa1987a4c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f5fc639e7094b0532b28111524e4373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43abd427770dc519c1a601af8dd5f8c6 |
publicationDate |
2011-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20110064300-A |
titleOfInvention |
Method for manufacturing a semiconductor device and a semiconductor device manufactured by the method |
abstract |
A method for manufacturing a semiconductor device and a semiconductor device are provided. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a first nanowire, and oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire. And oxidizing the second nanowires to form a second nanostructure including a second insulator and nano dots. |
priorityDate |
2009-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |