http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110064300-A

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filingDate 2009-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2011-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20110064300-A
titleOfInvention Method for manufacturing a semiconductor device and a semiconductor device manufactured by the method
abstract A method for manufacturing a semiconductor device and a semiconductor device are provided. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a first nanowire, and oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire. And oxidizing the second nanowires to form a second nanostructure including a second insulator and nano dots.
priorityDate 2009-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 34.