http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110061090-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_356068227e13eed6ff524f07808e0bf7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F212-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G73-1092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc76d2c2efeb1f62877006f10a6556fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32f90d4b3b188706e81cadd53f8e99ff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bd9e75853486621c4abaca76555701c |
| publicationDate | 2011-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110061090-A |
| titleOfInvention | Composition for forming an organic antireflection film and organic antireflection film comprising the same |
| abstract | The present invention relates to a composition for forming an organic antireflection film and an organic antireflection film including the same. Specifically, when the photoresist layer coated on a wafer is exposed, diffuse reflection occurs from an underlying layer to prevent a pattern from being generated unevenly. It is intended to provide diffuse reflection prevention effect even at a low film thickness of about tens of nanometers, to provide a wide focus margin with ease of processing, and to have fine patterns at high resolution.n n n In particular, the composition for forming an organic antireflection film according to the present invention satisfies the physical properties that the organic antireflection film should have even at a thin film of 110 nm or less under the exposure conditions of 248 nm and 193 nm wavelength and at the same time provides a uniform photoresist pattern during exposure. It can be formed, and can be quickly removed by dry etching, providing improved manufacturing yields and advantageous semiconductor manufacturing process conditions.n n n Anti-reflection film, semiconductor, BARC, ArF, KrF, 193nm, 248nm |
| priorityDate | 2009-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 120.