| abstract |
The present invention is to provide a semiconductor device having a carbon-containing electrode forming a high work function electrode, and a method for manufacturing the same, including an electrode of a semiconductor device having a titanium nitride film (TiN) containing a carbon (C) component In addition, by forming a titanium nitride film containing a carbon component to form an electrode having a high work function, by forming an electrode having a high work function it is possible to apply a high dielectric film, thereby improving the leakage current characteristics, high An electrode having a work function and a high dielectric film may be applied to secure the capacitance of the capacitor. |