| abstract |
The substrate has at least a gate electrode, a gate insulating film, a semiconductor layer, a protective layer of the semiconductor layer, a source electrode and a drain electrode, and the source electrode and the drain electrode are connected via the semiconductor layer, and the gate electrode A gate insulating film between the semiconductor layers, a protective layer on at least one surface side of the semiconductor layer, the semiconductor layer being an oxide containing In atoms, Sn atoms, and Zn atoms, represented by Zn / (In + Sn + Zn) A field effect transistor, wherein the atomic composition ratio is 25 atomic% or more and 75 atomic% or less, and the atomic composition ratio represented by Sn / (In + Sn + Zn) is less than 50 atomic%. |