http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110052674-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate | 2009-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69ff4355441743ba0ea68147764f271c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd79d955774624a15dd5459e5de68aa |
| publicationDate | 2011-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110052674-A |
| titleOfInvention | Silicon precursor for producing ultra low-density films with high mechanical properties by plasma chemical vapor deposition |
| abstract | The present invention provides a method of depositing a low dielectric constant film on a substrate. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds with porogen and post-treating the film to create pores in the film. One or more organosilicon compounds include compounds having the formula Si-C x -Si or -Si-O- (CH 2 ) n -O-Si-. The low dielectric constant films provided herein include films comprising Si—C x —Si bonds both before and after post treatment of the film. Low dielectric constant films have good mechanical and adhesive properties and desired dielectric constants. |
| priorityDate | 2008-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 98.