http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110043466-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_24aca9ded2638ea793d05360dde7a4a0 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2010-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a20104ecee0ec4bcd8f7e4cf2aa6743 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7504b6464847008bffd1808536c8ecb0 |
| publicationDate | 2011-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20110043466-A |
| titleOfInvention | Manufacturing method of photoresist pattern |
| abstract | The present invention provides a method for producing a photoresist pattern comprising the following steps (1) to (11): (1) A substrate having a first photoresist composition comprising an acid generator and a resin comprising a structural unit having an acid-labile group in a side chain and insoluble or poorly soluble in an aqueous alkali solution, but soluble in an aqueous alkali solution by the action of an acid. After coating on, drying to form a first photoresist film, (2) prebaking the first photoresist film, (3) exposing the prebaked first photoresist film to radiation, (4) baking the exposed first photoresist film, (5) developing the baked first photoresist film using a first alkaline developer to form a first photoresist pattern, (6) forming a coating layer on the first photoresist pattern, (7) applying a second photoresist composition on the coating layer and then drying to form a second photoresist film, (8) prebaking the second photoresist film, (9) exposing the prebaked second photoresist film to radiation, (10) baking the exposed second photoresist film, and (11) developing the baked second photoresist film using a second alkali developer to form a second photoresist pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170105520-A |
| priorityDate | 2009-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 374.