| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73d55b44219a84c850812a4488def924 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B2204-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-26 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-188
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-36 |
| filingDate |
2009-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eae9c2705708f7d856c220031ecd5c51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40d20887b958617b51a5b57164ac013c |
| publicationDate |
2011-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110038721-A |
| titleOfInvention |
Graphene / SiC composite material production method and graphene / SiC composite material obtained by |
| abstract |
Provided the manufacturing method which can advantageously manufacture the graphene / SiC composite material in which the large-area graphene flat at the atomic level is laminated | stacked and formed on the SiC single crystal substrate. By removing the oxide film covering the surface of the SiC single crystal substrate formed by natural oxidation, the Si surface of the SiC single crystal substrate is exposed, and then, the SiC single crystal substrate on which the Si surface is exposed is heated in an oxygen atmosphere, thereby providing such a SiC single crystal. Graphene / SiC formed by stacking one or more layers of graphene on a SiC single crystal substrate by forming a SiO 2 layer on the surface of the substrate and heating the SiC single crystal substrate on which the SiO 2 layer was formed under vacuum. Composite materials were prepared. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8890171-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160132551-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190010287-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150075596-A |
| priorityDate |
2008-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |