| abstract |
It is an object of the present invention to provide a technique for producing a dense crystalline semiconductor film (for example, a microcrystalline semiconductor film) having no cavity between crystal grains. The pressure of the reaction gas in the reaction chamber of the plasma CVD apparatus is 450 Pa to 1332 Pa, the distance between the first electrode and the second electrode of the plasma CVD apparatus is 1 mm to 20 mm, and the high frequency of 60 MHz or less is applied to the first electrode. By supplying electric power, a plasma region is formed between the first electrode and the second electrode, a deposition precursor made of a semiconductor having crystallinity is formed in the gas phase including the plasma region, and the deposition precursor is deposited, thereby, 5 to 5. A 15 nm crystal nucleus is formed and crystal growth is carried out to form a microcrystalline semiconductor film. |